US Patent Issued to NANYA TECHNOLOGY on May 27 for "Method for preparing semiconductor device structure having features of different depths" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,725, issued on May 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device structure having features of different depths" was invented by Kuo-Hui Su (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a first energy-sensitive pattern over the target layer. The method also includes forming a lining layer covering the first energy-sensitive pattern, and forming a second energy-sensitive pattern over the lining layer. The first energy-sensitive pattern and the ...