ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,734, issued on May 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Method for manufacturing semiconductor device" was invented by Li-Han Lin (Taoyuan, Taiwan), Jr-Chiuan Wang (New Taipei, Taiwan) and Szu-Yu Hou (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure is provided. First, a first insulating layer is formed over a substrate, and a second insulating layer having an opening is formed over the first insulating layer. A conductive line structure is formed in the opening of the second insulating layer, thereby forming a contact void between the second insulatin...