ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,084, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with assistant cap and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first impurity region positioned in the substrate; a first dielectric layer positioned on the substrate; a first contact including a buried portion positioned along the first dielectric layer and on the first impurity region, and a protrudin...