US Patent Issued to NANYA TECHNOLOGY on May 20 for "Semiconductor device structure with fluorine-catching layer" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,319, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure with fluorine-catching layer" was invented by Kuo-Hui Su (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device structure with a fluorine-catching layer. The semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a fluorine-catching layer disposed over the second dielectric layer, and a third dielectric l...