US Patent Issued to NANYA TECHNOLOGY on May 20 for "Semiconductor device structure with barrier portion" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,318, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taiepi, Taiwan).

"Semiconductor device structure with barrier portion" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a first conductive layer disposed in the first dielectric layer. The semiconductor device structure also includes a cap layer disposed over the first conductive layer, and a first barrier layer separating the first conductive layer and the cap layer from the first dielectric layer. The semiconductor device struct...