US Patent Issued to NANYA TECHNOLOGY on May 20 for "Method of manufacturing semiconductor structure having fins" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,280, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure having fins" was invented by Chen-Tsung Liao (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure having fins. The method includes providing a semiconductor substrate including a plurality of initial fin structures. The method also includes forming an isolation material covering the plurality of initial fin structures. The method further includes performing an anisotropic etching operation on the isolation material and the...