US Patent Issued to NANYA TECHNOLOGY on May 20 for "Method of manufacturing memory device having double sided capacitor" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,994, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing memory device having double sided capacitor" was invented by Wen-Chieh Wang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate; disposing a first supporting layer over the semiconductor substrate; disposing a first molding layer over the first supporting layer; disposing a second supporting layer over the first molding layer; removing a portion of the second supporting layer to form a first ...