US Patent Issued to NANYA TECHNOLOGY on May 20 for "Method for preparing semiconductor device structure with fluorine-catching layer" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,290, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device structure with fluorine-catching layer" was invented by Kuo-Hui Su (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for preparing a semiconductor device structure with a fluorine-catching layer. The method includes forming a first dielectric layer over a semiconductor substrate, and forming a first conductive via structure in the first dielectric layer. The method also includes forming a second dielectric layer over the first dielectric layer and covering the first condu...