US Patent Issued to NANYA TECHNOLOGY on May 20 for "Method for forming semiconductor interconnection structure against stress migration" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,310, issued on May 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for forming semiconductor interconnection structure against stress migration" was invented by Sheng-Fu Huang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor interconnection structure includes a lower inter-level dielectric layer located above a substrate, a lower metal via located in the lower inter-level dielectric layer, a first horizontal dielectric layer located over the lower inter-level dielectric layer and the lower metal via, an upper inter-level dielectric layer located over the first horizontal dielectric layer and...