US Patent Issued to NANYA TECHNOLOGY on March 4 for "Semiconductor structures having deep trench capacitor and methods for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,908, issued on March 4, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structures having deep trench capacitor and methods for manufacturing the same" was invented by Szu-Yu Hou (New Taipei, Taiwan) and Li-Han Lin (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate having a first surface, a plurality of layers disposed on the first surface of the substrate. The plurality of layers includes a first nitride layer disposed on the first surface of the substrate, a first silicon-containing lay...