US Patent Issued to NANYA TECHNOLOGY on March 4 for "Semiconductor device with porous dielectric layers and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,817, issued on March 4, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with porous dielectric layers and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of first conductive structures positioned on the substrate; a plurality of outer liner layer each positioned on a corresponding sidewall of the plurality of first conductive structures; and a plurality of bottom inter-f...