US Patent Issued to NANYA TECHNOLOGY on March 4 for "Method for preparing memory device having protrusion of word line" (Taiwanese Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,419, issued on March 4, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing memory device having protrusion of word line" was invented by Jar-Ming Ho (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for preparing a memory device. The method includes forming a first bottom cell within a bottom substrate, comprising: forming a first bottom capacitor within the bottom substrate; forming a first bottom word line on the bottom substrate and extending along a first direction; and forming a first bottom channel layer surrounded by the first bottom word line. The method al...