US Patent Issued to NANYA TECHNOLOGY on March 25 for "Method of manufacturing memory device having word lines with improved resistance" (Taiwanese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,524, issued on March 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing memory device having word lines with improved resistance" was invented by Jung-Yu Wu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for manufacturing a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The method includes providing a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region; forming a first recess extending into the semiconductor sub...