US Patent Issued to NANYA TECHNOLOGY on March 18 for "Semiconductor device having double bit capacity and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,534, issued on March 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device having double bit capacity and method for manufacturing the same" was invented by Ying-Chieh Lai (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a trench, and a word line structure in the trench. The semiconductor substrate has a first active region and an isolation layer. The first active region includes a first sub-active region, a second sub-active region, and a first separati...