US Patent Issued to NANYA TECHNOLOGY on March 18 for "Method for preparing recessed gate structure with protection layer" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,565, issued on March 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing recessed gate structure with protection layer" was invented by Kuo-Hui Su (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a recessed gate structure includes forming a recessed structure, wherein the recessed structure includes a substrate with the recess extending into the substrate from a topmost surface of the substrate; forming a first functional layer to at least cover a sidewall of a recess of the recessed structure; forming a second functional layer to cover the first functional layer; performing a ...