US Patent Issued to NANYA TECHNOLOGY on March 18 for "Memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,916, issued on March 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device" was invented by Chih-Jen Chen (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device of the disclosure includes a fuse voltage generator, a fuse storage and a logic circuit. The fuse voltage generator generates a fuse voltage in response to an enable signal having a first logic level, and stop generating the fuse voltage in response to the enable signal having a second logic level. The fuse storage storages a setting data of the memory device. The fuse storage outputs the setting data in response to the fuse voltage. Th...