US Patent Issued to NANYA TECHNOLOGY on March 18 for "Interconnection structure with composite isolation feature and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,146, issued on March 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, China).

"Interconnection structure with composite isolation feature and method for manufacturing the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an interconnection structure, a first isolation feature, and a second isolation feature. The interconnection structure has a first lateral surface and a second lateral surface. The first isolation feature is disposed on the first lateral surface of the inte...