US Patent Issued to NANYA TECHNOLOGY on March 11 for "Method for manufacturing semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,833, issued on March 11, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing semiconductor device structure" was invented by Yu-Ping Chen (New Taipei, Taiwan) and Chun-Shun Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing semiconductor device structure includes providing a substrate having a surface; forming a first gate structure on the surface; forming a second gate structure on the surface; forming a first well region in the substrate and between the first gate structure and the second gate structure; forming a conductive contact within a trench between the first ...