US Patent Issued to NANYA TECHNOLOGY on June 24 for "Semiconductor device with buried gate structures and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,597, issued on June 24, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with buried gate structures and method for preparing the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provide a semiconductor device and a method for preparing the semiconductor device. The semiconductor device includes a first buried gate structure and a second buried gate structure disposed in a semiconductor substrate. The first buried gate structure includes a first gate dielectric layer, and a first lower semiconductor layer disposed over the first gate dielectric...