US Patent Issued to NANYA TECHNOLOGY on June 24 for "Method for manufacturing semiconductor device with passing gate" (Taiwanese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,571, issued on June 24, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing semiconductor device with passing gate" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a first trench in a substrate, disposing a first gate electrode in the first trench, and disposing a dummy gate electrode on the first gate electrode in the first trench. The method also includes removing the dummy gate electrode from the first gate electrode and forming a first doped region in the f...