ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,062, issued on June 24, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for fabricating semiconductor device with liner structure" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for fabricating a semiconductor device. The method includes: providing a substrate; forming an impurity region in the substrate; forming a first dielectric layer on the substrate; forming an opening along the first dielectric layer to expose the impurity region; conformally forming a layer of first material in the opening; forming a layer of filler material on the la...