US Patent Issued to NANYA TECHNOLOGY on June 24 for "Method for fabricating semiconductor device with deposition cycles of chemical vapor deposition process to form composite contact structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,338,528, issued on June 24, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for fabricating semiconductor device with deposition cycles of chemical vapor deposition process to form composite contact structure" was invented by Yu-Chang Chang (Taoyuan, Taiwan) and Po-Hung Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for fabricating a semiconductor device. The method includes forming a first dielectric layer on a substrate; forming an expanded hole in the first dielectric layer; conformally forming an adhesive layer in the expanded hole by a first chemical vapor deposit...