US Patent Issued to NANYA TECHNOLOGY on June 17 for "Semiconductor structure and method of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,400, issued on June 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipel, Taiwan).

"Semiconductor structure and method of forming thereof" was invented by Ming Hsun Wu (New Taipei, Taiwan), Hsueh-Han Lu (New Taipei, Taiwan) and Yao Ching Chiu (Chiayi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes a number of operations. Conductors are formed in a first dielectric layer on a substrate. First conductive vias overlapping the conductors are formed in a second dielectric layer on the substrate. Electrodes are formed in a third dielectric layer on the substrate, wherein each of the el...