US Patent Issued to NANYA TECHNOLOGY on June 17 for "Semiconductor device with contact structure and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,262, issued on June 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with contact structure and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an impurity region positioned in the substrate; an intervening conductive layer positioned on the impurity region; a bottom conductive layer positioned on the bottom conductive layer; a conductive capping layer posit...