US Patent Issued to NANYA TECHNOLOGY on June 17 for "Semiconductor device having gate electrodes with dopant of different conductive types" (Taiwanese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,264, issued on June 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device having gate electrodes with dopant of different conductive types" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, and a second gate electrode. The first gate electrode is disposed on the substrate. The first gate electrode has a first dopant of a first conductive type. The second gate electrode is disposed on the substrate. The second gate electrode has a second dopant of a second conductive t...