US Patent Issued to NANYA TECHNOLOGY on June 10 for "Semiconductor device with adjustment layers and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,793, issued on June 10, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with adjustment layers and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device with adjustment layers and a method for fabricating the semiconductor device with the adjustment layers. The semiconductor device includes a substrate, an interconnection structure positioned on the substrate, a contact positioned penetrating the interconnection structure, two adjustment layers positioned on sidewalls of the contact, a co...