US Patent Issued to NANYA TECHNOLOGY on June 10 for "Memory structure including low dielectric constant capping layer" (Taiwanese Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,868, issued on June 10, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory structure including low dielectric constant capping layer" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure is described, which includes a substrate, a word line structure, a bit line contact, and a bit line. The substrate has a trench. The word line structure is disposed in the trench of the substrate. The word line structure includes a word line, a gate dielectric layer, and a capping layer. The word line is disposed in the trench. The gate dielectric layer is disposed between the word line a...