US Patent Issued to NANYA TECHNOLOGY on July 8 for "Semiconductor device with porous spacer made of low-K material and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,909, issued on July 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with porous spacer made of low-K material and manufacturing method thereof" was invented by Chao-Wen Lay (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor structure including a conductive feature therein, a bitline over the semiconductor structure, a spacer on a sidewall of the bitline, wherein the first spacer is made of SiCO, a dielectric layer over a top surface of the bitline; and a contact in contact with the dielectric layer and the spacer and connected to the conductive featu...