US Patent Issued to NANYA TECHNOLOGY on July 8 for "Method for preparing semiconductor device structure including bevel etching process" (Taiwanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,353,129, issued on July 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device structure including bevel etching process" was invented by Sheng-Hui Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor device structure is provided. The method includes forming a target layer over a semiconductor substrate, and forming an energy-sensitive layer over the target layer. The method also includes performing an energy treating process on the energy-sensitive layer to transform a portion of the energy-sensitive layer into a treated portion. An untreated porti...