US Patent Issued to NANYA TECHNOLOGY on July 22 for "Semiconductor device with supporting layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,310, issued on July 22, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with supporting layer and method for fabricating the same" was invented by Liang-Pin Chou (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a plurality of drain regions in a substrate; a plurality of capacitor plugs on the plurality of drain regions; a plurality of lower electrodes on the plurality of capacitor plugs and respectively including a U-shaped cross-sectional profile; a lower supporting layer above the substra...