US Patent Issued to NANYA TECHNOLOGY on July 15 for "Semiconductor structure with a porous structure" (Taiwanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,290, issued on July 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure with a porous structure" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure having a porous structure between a conductive pad and a metal layer. The semiconductor structure includes: a substrate including an interconnection structure; a dielectric layer disposed over the substrate; a conductive pad disposed over the dielectric layer; a passivation layer, disposed over the dielectric layer and partially exposing the conductive pad; and a poro...