US Patent Issued to NANYA TECHNOLOGY on July 15 for "Semiconductor device structure having a channel layer with different roughness" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,886, issued on July 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure having a channel layer with different roughness" was invented by Szu-Yao Chang (New Taipei, Taiwan) and Chung-Lin Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and method for manufacturing the same are provided. The semiconductor device structure includes a first word line, a second word line, a gate dielectric structure, a channel layer, and a bit line. The first word line and second word line extend along a first direction. The gate dielectric structure is disposed on a first ...