ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,881, issued on July 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing memory array with contact enhancement cap" was invented by Ping Hsu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array and a method for preparing the memory are provided. The memory array includes a semiconductor substrate, an isolation structure and contact enhancement sidewall spacers. The semiconductor substrate has a trench defining laterally separate active areas formed of surface regions of the semiconductor substrate. Top surfaces of a first group of the active areas are recessed with respect to top surface...