US Patent Issued to NANYA TECHNOLOGY on July 1 for "Semiconductor device with shallow contacts and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,396, issued on July 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with shallow contacts and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a word line structure positioned in the substrate; a plurality of impurity regions positioned in the substrate and adjacent to the word line structure; a plurality of bottom shallow contacts positioned on the word line structure; a first int...