US Patent Issued to NANYA TECHNOLOGY on July 1 for "Semiconductor device structure and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,686, issued on July 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure and method for preparing the same" was invented by Cheng-Hsiang Fan (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device structure with fine patterns and a method for forming the semiconductor device structure, which can prevent the collapse of the fine patterns. The semiconductor device structure includes a first target structure and a second target structure disposed over a semiconductor substrate. The semiconductor device structure also includes a first spacer element ...