US Patent Issued to NANYA TECHNOLOGY on July 1 for "Method for preparing semiconductor device structure having features of different depths" (Taiwanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,680, issued on July 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device structure having features of different depths" was invented by Kuo-Hui Su (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a first energy-sensitive pattern over the target layer. The method also includes performing an energy treating process to transform an upper portion of the first energy-sensitive pattern into a treated portion, forming a lining layer covering the first energy-se...