US Patent Issued to NANYA TECHNOLOGY on July 1 for "Memory device having improved P-N junction and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,338, issued on July 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device having improved P-N junction and manufacturing method thereof" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device including a semiconductor substrate having a first surface and defined with an active area under the first surface; a gate structure adjacent to the active area and indented into the semiconductor substrate from the first surface; a doped member extending into the semiconductor substrate and surrounded by the active area; a conductive layer including...