US Patent Issued to NANYA TECHNOLOGY on Jan. 28 for "Method for manufacturing semiconductor device comprising contact void surrounding bit line" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,739, issued on Jan. 28, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing semiconductor device comprising contact void surrounding bit line" was invented by Li-Han Lin (Taoyuan, Taiwan) and Jr-Chiuan Wang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming an isolation member defining an active region in a substrate; forming a first insulating layer having a bit line contact over the substrate; forming a second insulating layer having a bit line opening on the first insulating layer; forming a bit line structure in the bit line ope...