US Patent Issued to NANYA TECHNOLOGY on Jan. 27 for "Semiconductor memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,478, issued on Jan. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor memory device and manufacturing method thereof" was invented by Kai-Po Shang (Taichung, Taiwan) and Wei-Ming Liao (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate with an active area, a bit line contact in contact with the active area, and a bit line having an end portion in contact with the bit line contact, wherein the end portion has a first trapezoidal profile. A semiconductor memory device manufacturing method is also disclosed to utilize a vertical etching process which has an etc...