US Patent Issued to NANYA TECHNOLOGY on Jan. 27 for "Semiconductor device with filling layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,788, issued on Jan. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with filling layer and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer positioned on the substrate and including a top surface having a V-shaped cross-sectional profile; and a conductive filling layer positioned on the conductive concave layer; and a to...