US Patent Issued to NANYA TECHNOLOGY on Jan. 27 for "Semiconductor device with annular semiconductor fin and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,568, issued on Jan. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with annular semiconductor fin and method for preparing the same" was invented by Te-Yin Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an annular semiconductor fin over a semiconductor substrate, a first bottom source/drain structure within the annular semiconductor fin, a second bottom source/drain structure surrounding the annular semiconductor fin, a first silicide layer, a second silicide layer, a first gate structure, a second gate structure, a top source/drain structure, and a contact...