US Patent Issued to NANYA TECHNOLOGY on Jan. 27 for "Semiconductor device structure with composite hard mask and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,729, issued on Jan. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure with composite hard mask and method for preparing the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first semiconductor structure disposed over the second dielectric layer. The first semiconductor structure has a first portion and a second portion separate...