US Patent Issued to NANYA TECHNOLOGY on Jan. 27 for "Method of manufacturing semiconductor structure including nitrogen treatment" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,787, issued on Jan. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure including nitrogen treatment" was invented by Ying-Cheng Chuang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate, a residual nitrogen, a first dielectric layer, a plurality of first contacts, and a plurality of second contacts. The substrate includes a plurality of pillars in an array region of the substrate, wherein a top surface of each ...