US Patent Issued to NANYA TECHNOLOGY on Jan. 27 for "Method of fabricating semiconductor device with programmble feature" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,468, issued on Jan. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of fabricating semiconductor device with programmble feature" was invented by Yin-Fa Chen (New Taipei, Taiwan) and Jui-Hsiu Jao (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a semiconductor device. The method includes steps of providing a substrate comprising a first island a second island, wherein the first island has a first area and the second island has a second area greater than the first area; depositing an insulative layer to cover the substrate; forming a conductive feature ...