US Patent Issued to NANYA TECHNOLOGY on Jan. 20 for "Semiconductor memory device having dielectric spacer containing air gap formed thermal decomposable layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,459, issued on Jan. 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor memory device having dielectric spacer containing air gap formed thermal decomposable layer" was invented by Kuo Chung Hsu (Kaohsiung, Taiwan) and En-Jui Li (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a memory cell contact formed over the substrate, a bit line conductive structure formed over the substrate and a dielectric spacer located between the memory cell contact and the bit line conductive structure. The dielectric spacer includes an air gap having a rectangular cross-se...