US Patent Issued to NANYA TECHNOLOGY on Jan. 20 for "Capacitor and fabricating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,486, issued on Jan. 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Capacitor and fabricating method thereof" was invented by Chih-Hsiung Huang (Kaohsiung, Taiwan) and Ning-Shuang Hsu (Chiayi, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor for a memory device includes a substrate, a bottom electrode, a dielectric layer, and a top electrode. The bottom electrode includes a first bottom electrode layer and a second bottom electrode layer. The first bottom electrode layer is disposed on the substrate. The first bottom electrode layer has a cup shape. The first bottom electrode layer includes a plurality of titanium ...