US Patent Issued to NANYA TECHNOLOGY on Jan. 13 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,983, issued on Jan. 13, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure and method of manufacturing the same" was invented by Yao-Hsiung Kung (Taoyuan, Taiwan), Yu-Li Wu (New Taipei, Taiwan) and Shao-En Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes: a data storage unit in a first dielectric layer; a word line disposed over the data storage unit; an array of conductive pads disposed over the word line; a hard mask layer disposed over the arra...