US Patent Issued to NANYA TECHNOLOGY on Jan. 13 for "Method of manufacturing semiconductor device using underlayer for reducing defect in array region" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,475, issued on Jan. 13, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor device using underlayer for reducing defect in array region" was invented by Ying-Cheng Chuang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing the same is provided. The method includes providing a substrate. The method also includes forming a target layer over the substrate. The method further includes forming a patterned mask structure over the target layer. In addition, the method includes forming an etching stop layer over the patterned mask structure. The method also includes formin...