ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,523,936, issued on Jan. 13, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Method of manufacturing semiconductor device" was invented by Yu-Chen Huang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A portion of the photoresist layer is exposed, using a mask, to a radiation. The photoresist layer is treated, using a basic gas. The photoresist layer is developed to form a patterned photoresist layer over the substrate."
The patent was filed on July 1, 2022, under Application No. 17/810,349.
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