US Patent Issued to NANYA TECHNOLOGY on Feb. 3 for "Memory device having planarized fins and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,302, issued on Feb. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device having planarized fins and method of manufacturing the same" was invented by Ying-Cheng Chuang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device and a method of manufacturing the memory device. The memory device includes a semiconductor substrate defined with an active area and including a plurality of fins protruding from the semiconductor substrate and disposed within the active area, wherein each of the plurality of fins has a first planar top surface; a first word line extending into the ...